p-p isotype organic heterojunction and ambipolar field-effect transistors
文献类型：期刊论文
| 作者 | Wang HB ; Wang XJ ; Yu B ; Geng YH ; Yan DH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 93期号:11页码:文献编号：113303 |
| 关键词 | HETEROSTRUCTURE SEMICONDUCTORS |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang hb |
| 中文摘要 | we realized ambipolar transport behavior in field-effect transistors by using p-p isotype heterojunction films as active layers, which consisted of two p-type semiconductor materials, 2, 2'; 7', 2 ''-terphenanthrenyl (ph3) and vanadyl-phthalocyanine (vopc). the ambipolar charge transport was attributed to the interfacial electronic structure of ph3-vopc isotype heterojunction, and electrons and holes were accumulated at both sides of the narrow band-gap vopc and the wide band-gap ph3, respectively, which were confirmed by the capacitance-voltage relationship of metal-oxide-semiconductor diodes. the accumulation thickness of carriers was also obtained by changing the heterojunction active layer thickness. furthermore, the results indicate that the device performance is relative to interfacial electronic structures. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000259797900080 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10313]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang HB,Wang XJ,Yu B,et al. p-p isotype organic heterojunction and ambipolar field-effect transistors[J]. applied physics letters,2008,93(11):文献编号：113303. |
| APA | Wang HB,Wang XJ,Yu B,Geng YH,&Yan DH.(2008).p-p isotype organic heterojunction and ambipolar field-effect transistors.applied physics letters,93(11),文献编号：113303. |
| MLA | Wang HB,et al."p-p isotype organic heterojunction and ambipolar field-effect transistors".applied physics letters 93.11(2008):文献编号：113303. |
入库方式： OAI收割
来源：长春应用化学研究所
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