Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility
文献类型：期刊论文
| 作者 | Song D ; Zhu F ; Yu B ; Huang LH ; Geng YH ; Yana DH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 92期号:14页码:文献编号：143303 |
| 关键词 | FIELD-EFFECT TRANSISTORS THIN-FILM TRANSISTORS CHANNEL ORGANIC SEMICONDUCTORS HIGH CARRIER MOBILITY BUILDING-BLOCKS TRIFLUOROMETHYLPHENYL GROUPS PERFORMANCE OLIGOMERS |
| ISSN号 | 0003-6951 |
| 通讯作者 | yana dh |
| 中文摘要 | air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (iv) phthalocyanine oxide (snopc), as active layers. the snopc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) v-1 s(-1). after storage in air for 32 days, the mobility and on/off ratio did not obviously change. the above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000254940500090 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10327]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Song D,Zhu F,Yu B,et al. Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility[J]. applied physics letters,2008,92(14):文献编号：143303. |
| APA | Song D,Zhu F,Yu B,Huang LH,Geng YH,&Yana DH.(2008).Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility.applied physics letters,92(14),文献编号：143303. |
| MLA | Song D,et al."Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility".applied physics letters 92.14(2008):文献编号：143303. |
入库方式： OAI收割
来源：长春应用化学研究所
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