Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base
文献类型：期刊论文
| 作者 | Yi MD ; Huang JY ; Ma D ; Hummelgen IA |
| 刊名 | organic electronics
 |
| 出版日期 | 2008 |
| 卷号 | 9期号:4页码:539-544 |
| 关键词 | STATIC INDUCTION TRANSISTOR SEMICONDUCTOR TRANSISTOR HIGH-PERFORMANCE ARCHITECTURE |
| ISSN号 | 1566-1199 |
| 通讯作者 | ma d |
| 中文摘要 | in order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (alq(3))-based organic transistors, we used au/al double metal layer as the base, thus the vertical metal-base transistors with structure of al/n-si/au/al/alq(3)/lif/al were constructed. it was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. the utilization of au/al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000257211600018 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10699]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yi MD,Huang JY,Ma D,et al. Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base[J]. organic electronics,2008,9(4):539-544. |
| APA | Yi MD,Huang JY,Ma D,&Hummelgen IA.(2008).Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base.organic electronics,9(4),539-544. |
| MLA | Yi MD,et al."Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base".organic electronics 9.4(2008):539-544. |
入库方式： OAI收割
来源：长春应用化学研究所
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