High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter
文献类型：期刊论文
| 作者 | Yi MD ; Huang JY ; Ma DG ; Hummelgen IA |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 92期号:24页码:文献编号：243312 |
| 关键词 | STATIC INDUCTION TRANSISTOR ARCHITECTURE FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | yi md |
| 中文摘要 | we report the fabrication of permeable metal-base transistors based on bis(2-methyl-8-quinolinolato-n1,o8)-(1,1'-biphenyl-4-olato) aluminum (balq(3))/tri(8-hydroxyquinoline) aluminum (alq(3)) isotype heterostructure as emitter layer. in this transistor, n-si was used as the collector, lif/al as the emitter electrode, and au/al bilayer metal as the base. we show that the leakage current is greatly reduced in al/n-si/au/al/balq(3)/alq(3)/lif/al devices with respect to al/n-si/au/al/alq(3)/lif/al devices due to the utilization of balq(3)/alq(3) isotype heterostructure emitter, leading to high common-base and common-emitter current gains at low driving voltages. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000256934900112 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10701]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yi MD,Huang JY,Ma DG,et al. High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter[J]. applied physics letters,2008,92(24):文献编号：243312. |
| APA | Yi MD,Huang JY,Ma DG,&Hummelgen IA.(2008).High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter.applied physics letters,92(24),文献编号：243312. |
| MLA | Yi MD,et al."High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter".applied physics letters 92.24(2008):文献编号：243312. |
入库方式： OAI收割
来源：长春应用化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。