Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine
文献类型：期刊论文
| 作者 | Huang JY ; Yi MD ; Ma DG ; Hummelgen IA |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 92期号:23页码:文献编号：232111 |
| 关键词 | THIN-FILM-TRANSISTOR CURRENT GAIN ARCHITECTURE EMITTER |
| ISSN号 | 0003-6951 |
| 通讯作者 | ma dg |
| 中文摘要 | in this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. a hole-type organic semiconductor n,n-'-diphentyl-n,n-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. in the permeable-base transistors, the metal base was formed by firstly coevaporating al and ca in vacuum and then annealing at 120 degrees c for 5 min in air, followed by a thin al deposition. these devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000256706000038 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10703]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang JY,Yi MD,Ma DG,et al. Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine[J]. applied physics letters,2008,92(23):文献编号：232111. |
| APA | Huang JY,Yi MD,Ma DG,&Hummelgen IA.(2008).Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine.applied physics letters,92(23),文献编号：232111. |
| MLA | Huang JY,et al."Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine".applied physics letters 92.23(2008):文献编号：232111. |
入库方式： OAI收割
来源：长春应用化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。