Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage
文献类型：期刊论文
| 作者 | Feng CG ; Yi MD ; Yu SY ; Hummelgen IA ; Zhang T ; Ma DG |
| 刊名 | journal of nanoscience and
 |
| 出版日期 | 2008 |
| 卷号 | 8期号:4页码:2037-2043 |
| 关键词 | HIGHLY EFFICIENT INTERFACE DIODES OXIDE |
| ISSN号 | 1533-4880 |
| 通讯作者 | hummelgen ia |
| 中文摘要 | we demonstrate the suitability of n,n'-diphenyl-n,n'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (npb), an organic semiconductor widely used in organic light-emitting diodes (oleds), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. by introducing vanadium oxide (v2o5) between the injecting metal and npb layer at the transistor emitter, we reduced the emitter operational voltage. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000255790400055 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10729]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng CG,Yi MD,Yu SY,et al. Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage[J]. journal of nanoscience and,2008,8(4):2037-2043. |
| APA | Feng CG,Yi MD,Yu SY,Hummelgen IA,Zhang T,&Ma DG.(2008).Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.journal of nanoscience and,8(4),2037-2043. |
| MLA | Feng CG,et al."Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage".journal of nanoscience and 8.4(2008):2037-2043. |
入库方式： OAI收割
来源：长春应用化学研究所
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