Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors
文献类型：期刊论文
| 作者 | Yu S ; Yi M ; Ma D |
| 刊名 | thin solid films
 |
| 出版日期 | 2008 |
| 卷号 | 516期号:10页码:3346-3349 |
| 关键词 | FIELD-EFFECT TRANSISTORS ORGANIC TRANSISTORS MOBILITY VOLTAGE TEMPERATURE ELECTRONICS INSULATORS DEPENDENCE MORPHOLOGY POLYMERS |
| ISSN号 | 0040-6090 |
| 通讯作者 | ma d |
| 中文摘要 | copper phthalocyanine organic thin-film transistors (otfts) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in otfts were studied. the mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in otfts. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000254634600087 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10733]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu S,Yi M,Ma D. Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors[J]. thin solid films,2008,516(10):3346-3349. |
| APA | Yu S,Yi M,&Ma D.(2008).Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors.thin solid films,516(10),3346-3349. |
| MLA | Yu S,et al."Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors".thin solid films 516.10(2008):3346-3349. |
入库方式： OAI收割
来源：长春应用化学研究所
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