Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film
文献类型：期刊论文
| 作者 | Yang JL ; Wang T ; Wang HB ; Zhu F ; Li G ; Yan DH |
| 刊名 | journal of physical chemistry b
 |
| 出版日期 | 2008 |
| 卷号 | 112期号:26页码:7821-7825 |
| 关键词 | WEAK EPITAXY GROWTH BENT-CORE COMPOUND PHASE-TRANSITIONS PHTHALOCYANINE MONOLAYER OLIGOMERS MOBILITY F16CUPC SIO2 |
| ISSN号 | 1520-6106 |
| 通讯作者 | yan dh |
| 中文摘要 | the large-size domain and continuous para-sexiphenyl (p-6p) ultrathin film was fabricated successfully on silicon dioxide (sio2) substrate and investigated by atomic force microscopy and selected area electron diffraction. at the optimal substrate temperature of 180 degrees c, the first-layer film exhibits the mode of layer growth, and the domain size approaches 100 mu m(2). its saturated island density (0.018 mu m(-2)) is much smaller than that of the second-layer film (0.088 mu m(-2)), which begins to show the volmer-weber growth mode. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000257155400019 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10741]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang JL,Wang T,Wang HB,et al. Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film[J]. journal of physical chemistry b,2008,112(26):7821-7825. |
| APA | Yang JL,Wang T,Wang HB,Zhu F,Li G,&Yan DH.(2008).Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film.journal of physical chemistry b,112(26),7821-7825. |
| MLA | Yang JL,et al."Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film".journal of physical chemistry b 112.26(2008):7821-7825. |
入库方式： OAI收割
来源：长春应用化学研究所
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