Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature
文献类型：期刊论文
| 作者 | Yang JL ; Wang T ; Wang HB ; Zhu F ; Li G ; Yan DH |
| 刊名 | journal of physical chemistry b
 |
| 出版日期 | 2008 |
| 卷号 | 112期号:26页码:7816-7820 |
| 关键词 | BENT-CORE COMPOUND ISLAND-SIZE DISTRIBUTION WEAK EPITAXY GROWTH PHASE-TRANSITIONS PHTHALOCYANINE TRANSISTORS OLIGOMERS MICROSCOPY MONOLAYER MOBILITY |
| ISSN号 | 1520-6106 |
| 通讯作者 | yan dh |
| 中文摘要 | the para-sexiphenyl (p-6p) monolayer film induces weak epitaxy growth (weg) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [wang et al., adv. mater. 2007, 19, 2168]. the growth behavior and morphology of p-6p monolayer film play decisive roles on weg. here, we investigated the growth behavior of p-6p submonolayer film as a function of the substrate temperature. its growth exhibited two different mechanisms at high and low substrate temperature. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000257155400018 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10807]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang JL,Wang T,Wang HB,et al. Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature[J]. journal of physical chemistry b,2008,112(26):7816-7820. |
| APA | Yang JL,Wang T,Wang HB,Zhu F,Li G,&Yan DH.(2008).Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature.journal of physical chemistry b,112(26),7816-7820. |
| MLA | Yang JL,et al."Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature".journal of physical chemistry b 112.26(2008):7816-7820. |
入库方式： OAI收割
来源：长春应用化学研究所
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