中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method

文献类型:期刊论文

作者TAO ZHU1,2; ZANHONG DENG1,2; XIAODONG FANG1,2,3; WEIWEI DONG1,2; JINGZHEN SHAO1,2; RUHUA TAO1,2; SHIMAO WANG1,2; Tao, Ruhua; Deng, Zanhong; Deng, Zanhong
刊名bulletin of materials science
出版日期2016
卷号39期号:3页码:883-887
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/21589]  
专题合肥物质科学研究院_中科院安徽光学精密机械研究所
作者单位1.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China
2.Chinese Acad Sci, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
3.Univ Sci & Technol China, Hefei 230026, Peoples R China
推荐引用方式
GB/T 7714
TAO ZHU,ZANHONG DENG,XIAODONG FANG,et al. Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method[J]. bulletin of materials science,2016,39(3):883-887.
APA TAO ZHU.,ZANHONG DENG.,XIAODONG FANG.,WEIWEI DONG.,JINGZHEN SHAO.,...&Wang, Shimao.(2016).Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method.bulletin of materials science,39(3),883-887.
MLA TAO ZHU,et al."Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method".bulletin of materials science 39.3(2016):883-887.

入库方式: OAI收割

来源:合肥物质科学研究院

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