Very low hysteresis organic thin-film transistors
文献类型：期刊论文
| 作者 | Li CH ; Pan F ; Zhu F ; Song D ; Wang H ; Yan DH |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2009 |
| 卷号 | 24期号:8页码:文献编号：085009 |
| 关键词 | FIELD-EFFECT TRANSISTORS ACTIVE-MATRIX DISPLAYS GATE INSULATORS DIELECTRICS FABRICATION DRIVEN LAYERS OXID |
| ISSN号 | 0268-1242 |
| 通讯作者 | yan dh |
| 中文摘要 | very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (tfts) have been fabricated using benzocyclobutenone (bcbo) derivatives/tantalum pentoxide (ta2o5)/bcbo triple gate dielectrics. the field effect mobility, on/off current ratio and threshold voltage of organic tfts are 0.45 cm(2) v-1 s(-1), 3.5 x 10(4) and -6.8 v, respectively. to clarify the mechanism of hysteresis, devices with different dielectrics have been studied. it is found that the bottom bcbo derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000268301000009 |
| 公开日期 | 2010-05-04 |
| 源URL | [http://202.98.16.49/handle/322003/11251]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li CH,Pan F,Zhu F,et al. Very low hysteresis organic thin-film transistors[J]. semiconductor science and technology,2009,24(8):文献编号：085009. |
| APA | Li CH,Pan F,Zhu F,Song D,Wang H,&Yan DH.(2009).Very low hysteresis organic thin-film transistors.semiconductor science and technology,24(8),文献编号：085009. |
| MLA | Li CH,et al."Very low hysteresis organic thin-film transistors".semiconductor science and technology 24.8(2009):文献编号：085009. |
入库方式： OAI收割
来源：长春应用化学研究所
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