Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes
文献类型：期刊论文
| 作者 | Wang FX ; Xiong T ; Qiao MF ; Ma DG |
| 刊名 | organic electronics
 |
| 出版日期 | 2009 |
| 卷号 | 10期号:2页码:266-274 |
| 关键词 | ELECTRON INJECTION ELECTROLUMINESCENT DEVICES CONJUGATED POLYMERS CURRENT-VOLTAGE CARBONATE TRANSPORT |
| ISSN号 | 1566-1199 |
| 通讯作者 | ma dg |
| 中文摘要 | it has been found that cesium hydroxide (csoh) doped tris(8-hydroxyquinoline) aluminum (alq(3)) as an interfacial modification layer on indium-tin-oxide (ito) is an effective cathode structure in inverted bottom-emission organic light-emitting diodes (iboleds). the efficiency and high temperature stability of iboleds with csoh:alq(3) interfacial layer are greatly improved with respect to the iboleds with the case of cs2co3:alq(3). herein, we have studied the origin of the improvement in efficiency and high temperature stability via the modification role of csoh:alq(3) interfacial layer on ito cathode in iboleds by various characterization methods, including atomic force microscopy (afm), ultraviolet photoemission spectroscopy (ups), x-ray photoemission spectroscopy (xps) and capacitance versus voltage (c-v). the results clearly demonstrate that the csoh:alq(3) interfacial modification layer on ito cathode not only enhances the stability of the cathode interface and electron-transporting layer above it. which are in favor of the improvement in device stability, but also reduces the electron injection barrier and increases the carrier density for current conduction, leading to higher efficiency. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000264269600008 |
| 公开日期 | 2010-05-27 |
| 源URL | [http://202.98.16.49/handle/322003/12243]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang FX,Xiong T,Qiao MF,et al. Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes[J]. organic electronics,2009,10(2):266-274. |
| APA | Wang FX,Xiong T,Qiao MF,&Ma DG.(2009).Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes.organic electronics,10(2),266-274. |
| MLA | Wang FX,et al."Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes".organic electronics 10.2(2009):266-274. |
入库方式： OAI收割
来源：长春应用化学研究所
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