Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction
文献类型：期刊论文
| 作者 | Huang JY ; Yi MD ; Hummelgen IA ; Ma DG |
| 刊名 | organic electronics
 |
| 出版日期 | 2009 |
| 卷号 | 10期号:1页码:210-213 |
| 关键词 | FIELD-EFFECT TRANSISTORS THIN-FILM TRANSISTORS ORGANIC TRANSISTORS PENTACENE INVERTERS |
| ISSN号 | 1566-1199 |
| 通讯作者 | ma dg |
| 中文摘要 | in this paper, we report the fabrication of permeable metal-base organic transistors based on n,n'-diphenyl-n,n'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (npb)/c-60 heterojunction as both emitter and collector. by applying different polarities of voltage bias to the collector and the base, and input current to the emitter, the ambipolar behavior can be observed. the device demonstrates excellent common-base characteristics both in p-type and n-type modes with common-base current gains of 0.998 and 0.999, respectively. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000262889400031 |
| 公开日期 | 2010-05-27 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/12251]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang JY,Yi MD,Hummelgen IA,et al. Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction[J]. organic electronics,2009,10(1):210-213. |
| APA | Huang JY,Yi MD,Hummelgen IA,&Ma DG.(2009).Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction.organic electronics,10(1),210-213. |
| MLA | Huang JY,et al."Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction".organic electronics 10.1(2009):210-213. |
入库方式： OAI收割
来源：长春应用化学研究所
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