Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes
文献类型：期刊论文
| 作者 | Wang FX ; Qiao XF ; Xiong T ; Ma DG |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 105期号:8页码:文献编号：084518 |
| 关键词 | METAL-OXIDES STABILITY DEVICE |
| ISSN号 | 0021-8979 |
| 通讯作者 | wang fx |
| 中文摘要 | by introducing tungsten oxide (wo3) doped n,n-'-di(naphthalen-1-yl)-n,n-'-diphenyl-benzidine (npb) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (oleds). the detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. the experimental results clearly demonstrated that using wo3 doped npb as the hole injection layer in oleds not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. it could be seen that due to the utilization of wo3 doped npb hole injection layer in npb/tris (8-quinolinolato) aluminum (alq(3))-based device, the maximum efficiency reached 6.1 cd a(-1) and 4.8 lm w-1, which were much higher than 4.5 cd a(-1) and 1.1 lm w-1 of npb/alq(3) device without hole injection layer. the device with wo3 doped npb hole injection layer yet gave high efficiency of 6.1 cd a(-1) (2.9 lm w-1) even though the device was fabricated at substrate temperature of 80 degrees c. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000268064700176 |
| 公开日期 | 2010-05-27 |
| 源URL | [http://202.98.16.49/handle/322003/12255]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang FX,Qiao XF,Xiong T,et al. Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes[J]. journal of applied physics,2009,105(8):文献编号：084518. |
| APA | Wang FX,Qiao XF,Xiong T,&Ma DG.(2009).Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes.journal of applied physics,105(8),文献编号：084518. |
| MLA | Wang FX,et al."Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes".journal of applied physics 105.8(2009):文献编号：084518. |
入库方式： OAI收割
来源：长春应用化学研究所
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