Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics
文献类型:期刊论文
作者 | Serbena JPM ; Huang JY ; Ma D ; Wang ZY ; Huemmelgen IA |
刊名 | organic electronics
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出版日期 | 2009 |
卷号 | 10期号:2页码:357-362 |
关键词 | LOW OPERATIONAL VOLTAGE ORGANIC TRANSISTORS HIGH-PERFORMANCE CURRENT GAIN TRIODES EMITTER LAYER |
ISSN号 | 1566-1199 |
通讯作者 | huemmelgen ia |
中文摘要 | in this work we present a permeable base transistor consisting of a 60 nm thick n,n'diphenyl-n,n'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a calal/ca multilayer as the metal base, and p-si as collector. in the base, the ca layers are 5 nm thick and the al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. the devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. the obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000264269600021 |
公开日期 | 2010-05-27 |
源URL | [http://202.98.16.49/handle/322003/12329] ![]() |
专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
推荐引用方式 GB/T 7714 | Serbena JPM,Huang JY,Ma D,et al. Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics[J]. organic electronics,2009,10(2):357-362. |
APA | Serbena JPM,Huang JY,Ma D,Wang ZY,&Huemmelgen IA.(2009).Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics.organic electronics,10(2),357-362. |
MLA | Serbena JPM,et al."Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics".organic electronics 10.2(2009):357-362. |
入库方式: OAI收割
来源:长春应用化学研究所
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