MEMS射频薄膜体声波谐振器（FBAR）研究
文献类型：学位论文
| 作者 | 汤亮 |
| 学位类别 | 博士 |
| 答辩日期 | 2009-05-22 |
| 授予单位 | 中国科学院声学研究所 |
| 授予地点 | 声学研究所 |
| 关键词 | 微机电系统 薄膜体声波谐振器 高次谐波体声波谐振器 氧化锌 氮化铝 滤波器 振荡器 传感器 |
| 其他题名 | Research on MEMS RF Film Bulk Acoustic Resonator（FBAR） |
| 学位专业 | 信号与信息处理 |
| 中文摘要 | 无线移动通讯市场的快速发展引起了对0.5GHz-10GHz频段内射频振荡器、滤波器和双工器的极大需求。由于MEMS射频薄膜体声波谐振器（FBAR）在这些领域的潜在应用前景，使其成为目前研究的一个热点。论文首先介绍了FBAR器件的研究背景，然后对其进行了系统性的研究，包括理论分析、制备工艺研究和相关应用研究。 论文对FBAR器件的工作机制进行了系统的理论分析。论文首先推导出了加入材料介质声损耗的一维模型，并利用该模型分析了FBAR器件的谐振特性，包括：压电薄膜材料及厚度、电极材料及厚度、支持层材料及厚度对FBAR器件性能的影响；考虑到实际器件的情况，论文对复合膜结构作支持层的FBAR器件以及在顶电极和压电薄膜之间加入绝缘层的FBAR器件也进行了模拟分析；另外，考虑到实际制备的压电薄膜往往存在介电损耗，论文还对加入介电损耗和材料介质声损耗的FBAR器件进行了模拟分析。在固态装配型谐振器（SMR）方面，论文采用上述模型分析了四分之一波长布拉格反射栅对其谐振特性的影响，得到了SMR器件获得理想性能所需的最少反射栅对数；另外，考虑到实际制备反射栅时薄膜厚度不容易控制的问题，论文还分析了薄膜厚度与设计标准值相差±10%时SMR器件的性能情况。在FBAR器件的三维模型分析方面，论文采用CovertorWare软件分别对方形顶电极和圆形顶电极的FBAR器件进行了三维有限元模型分析，研究了FBAR器件在谐振频率附近的杂散模式情况。以上理论方面的研究为实际制备FBAR器件提供了指导依据。 压电薄膜是FBAR器件的核心，压电薄膜的性能直接决定了FBAR器件的性能，因此制备性能良好的压电薄膜成为FBAR器件研制的关键。在应用于FBAR器件的压电薄膜制备及性能分析方面，论文首先提出了采用压电薄膜结构特性分析和HBAR器件测试结果相结合的压电薄膜性能分析方法，采用直流磁控溅射和射频磁控溅射制备了两种ZnO压电薄膜，并采用该方法分别对其性能进行了分析，提取出相应的薄膜介电常数和介电损耗因子。另外，论文还采用射频磁控溅射方法制备了AlN压电薄膜，分别就不同基片温度、不同气体流量比以及不同溅射气压对AlN薄膜择优取向的影响进行了分析，得到了最优的工艺参数，并制备了相应的HBAR器件来检验AlN薄膜的性能。优良性能压电薄膜的制备为FBAR器件的研制打下了基础。 在FBAR器件的研制和应用方面，首先为了解决单层SixNy薄膜作器件支撑时由于残余应力的作用会导致器件出现褶皱和破裂现象的问题，论文提出了采用SixNy/SiO2/SixNy复合膜作器件的支撑来获得较小应力的支撑结构，从而有效地解决了上述问题，分别制备了谐振频率约2.17GHz、 值达到972以及谐振频率约2.4GHz、 值达到500的FBAR器件。然后针对制备的FBAR器件，论文进行了简单的可靠性实验，包括自由坠落冲击实验和输入功率容忍度实验，证明了论文中制备的器件具有较好的抗冲击能力和至少10dBm的输入功率承受能力。最后论文介绍了我们在FBAR器件应用方面的研究，主要包括三个方面：基于FBAR器件的梯形滤波器研究、基于FBAR器件的射频振荡器研究和基于FBAR器件的微质量传感实验。 |
| 英文摘要 | Recently, the rapid growth of wireless mobile telecommunication systems has led to an increasing demand for high-frequency oscillators, filters and duplexers operating in the 0.5GHz to 10GHz frequency range. Because Film bulk acoustic resonator, or FBAR, has the potential to be applied in these fields, there has been increasing interest in the study of FBAR recently. In this thesis, the development of FBAR is reviewed first, and then systematical study on FBAR is carried out in terms of theoretical analysis, fabrication and related applications. The mechanism of FBAR device is theoretically studied. 1-D Mason model of FBAR device with acoustic attenuation is derived. With this model, the resonant properties of FBAR device are investigated, including the influence of different materials and thickness of piezoelectric layer, electrodes and support membrane. For the actual situations, FBAR devices with composite support membrane and insulated layer between the top electrode and piezoelectric layer, are also simulated and analyzed. Because there exists dielectric loss in the deposited piezoelectric material, the influence of dielectric loss on the performance of FBAR device is also investigated. For the solidly mounted resonator, or SMR, the influence of 1/4 λ Bragg acoustic reflector on the performance of SMR device is simulated and analyzed with the model mentioned above, and the least pair number of reflectors to make SMR device work perfectly is obtained. Besides, for the thickness of reflectors can’t be controlled perfectly as the designed one in the fabrication process, the performance of SMR device with thickness variation of ±10% from the designed one is also analyzed. With CoventorWare software, the spurious modes near the series and parallel resonant frequencies of FBAR devices, the top electrodes of which are rectangular and circular separately, are simulated and analyzed with 3-D FEM method. All the simulations mentioned above are very helpful to optimize FBAR design. Piezoelectric film is the “heart” of FBAR device, so depositing piezoelectric film with good quality is the key process to fabricate FBAR device. In this thesis, a method to characterize piezoelectric films with both structural characteristics and measured electrical results of HABR device is proposed. ZnO piezoelectric films are deposited by both DC and RF reactive magnetron sputtering methods, and analyzed using the method mentioned above. The dielectric constant and dielectric loss factor of ZnO films are extracted. In addition, AlN piezoelectric film is also deposited by RF reactive magnetron sputtering method. The optimized process parameters are obtained through comparison of AlN films deposited with different parameters, including different substrate temperature, different gas ratio and different working pressure. The characteristic of AlN piezoelectric film is also examined by HBAR device. These piezoelectric films with good quality are prepared for FBAR devices. Firstly, to overcome the wrinkling and cracking in the released support membrane caused by the residual stress of single Si3N4 membrane, a composite membrane with Si3N4/SiO2/Si3N4 films is proposed as the support membrane of FBAR device. Then FBAR devices with 2.17GHz, quality factor 972 and 2.4GHz, quality factor 500 are fabricated separately. Then some reliable and robust experiments of the fabricated FBAR devices have been done, including dropping test and power handling capability test. Results reveal that FBAR devices fabricated in this thesis have good anti-dropping ability and >10dBm power handling capability. Finally, the applications of FBAR devices are introduced, including ladder-type filter based on FBAR, RF oscillator based on FBAR and micro-mass sensor experiments based on FBAR. |
| 语种 | 中文 |
| 公开日期 | 2011-05-07 |
| 页码 | 186 |
| 源URL | [http://159.226.59.140/handle/311008/476]  |
| 专题 | 声学研究所_声学所博硕士学位论文_1981-2009博硕士学位论文 |
| 推荐引用方式 GB/T 7714 | 汤亮. MEMS射频薄膜体声波谐振器（FBAR）研究[D]. 声学研究所. 中国科学院声学研究所. 2009. |
入库方式： OAI收割
来源：声学研究所
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