n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer
文献类型：期刊论文
| 作者 | Liu, Tony Chi ; Kabuyanagi, Shoichi ; Nishimura, Tomonori ; Yajima, Takeaki ; Toriumi, Akira |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2017-06-01 |
| 卷号 | 38期号:6页码:716-719 |
| ISSN号 | 0741-3106 |
| 关键词 | Germanium heterojunctions passivation interlayer bonding |
| 通讯作者 | Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan. |
| 中文摘要 | A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed. |
| 学科主题 | Engineering, Electrical & Electronic |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2017-08-17 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/78113]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,et al. n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(6):716-719. |
| APA | Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,Yajima, Takeaki,&Toriumi, Akira.(2017).n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer.IEEE ELECTRON DEVICE LETTERS,38(6),716-719. |
| MLA | Liu, Tony Chi,et al."n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer".IEEE ELECTRON DEVICE LETTERS 38.6(2017):716-719. |
入库方式： OAI收割
来源：金属研究所
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