Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction
文献类型：期刊论文
| 作者 | Han, D. ; J. Bang; W. Y. Xie; V. Meunier and S. B. Zhang
|
| 刊名 | Journal of Physical Chemistry Letters
 |
| 出版日期 | 2016 |
| 卷号 | 7期号:18 |
| 英文摘要 | A Hexapod precision positioning platform called the Secondary Mirror Adjustment Mechanism (SMAM) was designed to precisely adjust the second mirror of a large optical payload. The structure configurations were optimized based on the multi-objective function, and the errors of each strut and the upper (lower) hinges were distributed by the optimization algorithm. A kinematic model and a static flexibility model for the Hexapod platform were established, and the influences of main structure parameters on the mechanism performance were analyzed. Then, the positioning accuracy and anti-deformation indexes were put forward. By using the structural parameters as variables, the optimization functions were established, and two single-objective functions were optimized by the genetic algorithm. At the same time, a unified constraint function of weight factor was constructed, and the multi-objective function was also optimized by the genetic algorithm. Afterwards, a nonlinear optimized error distribution model was established, and it was used to distribute the errors for each strut and the upper (lower) hinges. Finally, by testing the performance indexes of a prototype, the efficiency of the proposed method was verified. The research results after optimization show that the positioning accuracy and the anti-deformation capacity are improved by 8.3% and 62.5%, respectively. The upper and lower hinge error bounds increase from 2.7 m to 6.3 m, and each strut error bound increases from 1.3 m to 3.2 m. Moreover, the relative positing accuracy and the static stiffness of Z axis are 0.6% and 41.14 N/m, respectively. The research in this paper improves the positioning accuracy and anti-deformation ability, and saves the design cycles and processing costs. 2016, Science Press. All right reserved. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/56949]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Han, D.,J. Bang,W. Y. Xie,et al. Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction[J]. Journal of Physical Chemistry Letters,2016,7(18). |
| APA | Han, D.,J. Bang,W. Y. Xie,&V. Meunier and S. B. Zhang.(2016).Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction.Journal of Physical Chemistry Letters,7(18). |
| MLA | Han, D.,et al."Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction".Journal of Physical Chemistry Letters 7.18(2016). |
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