High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Zhou, Y. L.; J. Zhang; Y. Q. Ning; Y. G. Zeng; J. W. Zhang; X. Zhang; L. Qin; C. Z. Tong; Y. Liu and L. J. Wang |
| 刊名 | Optics Express
 |
| 出版日期 | 2016 |
| 卷号 | 24期号:25 |
| 英文摘要 | In this paper, we demonstrate high power, dual-wavelength (dual-lambda) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-lambda lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-lambda operation only using Fabry-Perot (FP) cavity, which is significant for compact size and low fabrication cost. (C) 2016 Optical Society of America |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/57493]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Zhou, Y. L.,J. Zhang,Y. Q. Ning,et al. High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots[J]. Optics Express,2016,24(25). |
| APA | Zhou, Y. L..,J. Zhang.,Y. Q. Ning.,Y. G. Zeng.,J. W. Zhang.,...&Y. Liu and L. J. Wang.(2016).High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots.Optics Express,24(25). |
| MLA | Zhou, Y. L.,et al."High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots".Optics Express 24.25(2016). |
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