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GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template
文献类型：期刊论文
| 作者 | Fu, XX ; Zhang, B ; Kang, XN ; Deng, JJ ; Xiong, C ; Dai, T ; Jiang, XZ ; Yu, TJ ; Chen, ZZ ; Zhang, GY |
| 刊名 | OPTICS EXPRESS
 |
| 出版日期 | 2011 |
| 卷号 | 19期号:19页码:5,A1104-A1108 |
| ISSN号 | 1094-4087 |
| 中文摘要 | In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE). The light output power improvement of PhCs-based GaN LED was achieved as high as 94% compared to that of the conventional GaN-based LED. (C) 2011 Optical Society of America |
| 学科主题 | Optics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000294781200009 |
| 公开日期 | 2012-11-12 |
| 源URL | [http://ir.casipm.ac.cn/handle/190111/4269]  |
| 专题 | 科技战略咨询研究院_中国科学院科技政策与管理科学研究所(1985年6月-2015年12月) |
| 推荐引用方式 GB/T 7714 | Fu, XX,Zhang, B,Kang, XN,et al. GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template[J]. OPTICS EXPRESS,2011,19(19):5,A1104-A1108. |
| APA | Fu, XX.,Zhang, B.,Kang, XN.,Deng, JJ.,Xiong, C.,...&Zhang, GY.(2011).GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.OPTICS EXPRESS,19(19),5,A1104-A1108. |
| MLA | Fu, XX,et al."GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template".OPTICS EXPRESS 19.19(2011):5,A1104-A1108. |
入库方式： OAI收割
来源：科技战略咨询研究院
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