An Investigation of ELDRS in Different SiGe Processes
文献类型：期刊论文
| 作者 | Li, P (Li, Pei); He, CH (He, Chaohui); Guo, HX (Guo, Hongxia); Guo, Q (Guo, Qi) ; Zhang, JX (Zhang, Jinxin); Liu, MH (Liu, Mohan)
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| 刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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| 出版日期 | 2017 |
| 卷号 | 64期号:5页码:1137-1141 |
| 关键词 | Different silicon-germanium (SiGe) process emitter-base (EB)-spacer geometry enhanced low dose rate sensitivity (ELDRS) isolation structure |
| 英文摘要 | Enhanced low dose rate sensitivity (ELDRS) in different process Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. Low and high dose rate irradiations are performed to evaluate the ELDRS of SiGe HBTs manufactured by Tsinghua University (THU). THU SiGe HBTs experience significantly low dose rate sensitivity than that of IBM 8HP SiGe HBTs and behave a "true" dose rate effect. TCAD models were used to explicate the microcosmic structure in THU and IBM 8HP SiGe HBTs. Comparison and discussion show that different SiGe processes may involve different HBT structures and device designs which are the critical influence of ELDRS effect. The different responses of ELDRS should be first attributed to the device structure and design in nature, particularly the geometry of emitter-base junction and the isolation structure. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000401949800005 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4816]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xi An Jiao Tong Univ, Xian 710049, Peoples R China； Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China； Northwest Inst Nucl Technol, Xian 710024, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, P ,He, CH ,Guo, HX ,et al. An Investigation of ELDRS in Different SiGe Processes[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2017,64(5):1137-1141. |
| APA | Li, P ,He, CH ,Guo, HX ,Guo, Q ,Zhang, JX ,&Liu, MH .(2017).An Investigation of ELDRS in Different SiGe Processes.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,64(5),1137-1141. |
| MLA | Li, P ,et al."An Investigation of ELDRS in Different SiGe Processes".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 64.5(2017):1137-1141. |
入库方式： OAI收割
来源：新疆理化技术研究所
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