High B value Mn-Co-Ni spinel films on alumina substrate by RF sputtering
文献类型:期刊论文
作者 | Shi, Q (Shi, Qin); Ren, W (Ren, Wei); Kong, WW (Kong, Wenwen); Gao, B (Gao, Bo); Wang, L (Wang, Lei); Ma, C (Ma, Chao); Chang, AM (Chang, Aimin)![]() |
刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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出版日期 | 2017 |
卷号 | 28期号:13页码:9876-9881 |
通讯作者 | Ren, W ; Wang, L |
英文摘要 | A series of Mn-Co-Ni-O spinel oxide films showing negative temperature coefficient were successfully deposited on alumina ceramic substrates by RF sputtering procedure. All films showed a poly-crystalline spinel structure. For an Ar:O-2 ratio of 10:0, the deposited film showed the highest grow rate and a two-layer-structured Mn-Co-Ni-O spinel film was formed. The high performance of the MCN thin film is testified by a room temperature resistance of 4.16 M Omega, a B value of 5999 K and activation energy of 0.52 eV. These improvements are meaningful, especially concerning industrial applications. |
收录类别 | SCI |
WOS记录号 | WOS:000402566900088 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/4871] ![]() |
专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
作者单位 | 1.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environments, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China 2.Shihezi Univ, Dept Phys, Shihezi 832003, Peoples R China 3.Chendu Technol Univ, Coll Elect Engn, Chengdu 611730, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Shi, Q ,Ren, W ,Kong, WW ,et al. High B value Mn-Co-Ni spinel films on alumina substrate by RF sputtering[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(13):9876-9881. |
APA | Shi, Q .,Ren, W .,Kong, WW .,Gao, B .,Wang, L .,...&Bian, L .(2017).High B value Mn-Co-Ni spinel films on alumina substrate by RF sputtering.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28(13),9876-9881. |
MLA | Shi, Q ,et al."High B value Mn-Co-Ni spinel films on alumina substrate by RF sputtering".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28.13(2017):9876-9881. |
入库方式: OAI收割
来源:新疆理化技术研究所
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