中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High B value Mn-Co-Ni spinel films on alumina substrate by RF sputtering

文献类型:期刊论文

作者Shi, Q (Shi, Qin); Ren, W (Ren, Wei); Kong, WW (Kong, Wenwen); Gao, B (Gao, Bo); Wang, L (Wang, Lei); Ma, C (Ma, Chao); Chang, AM (Chang, Aimin); Bian, L (Bian, Liang)
刊名JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版日期2017
卷号28期号:13页码:9876-9881
通讯作者Ren, W ; Wang, L
英文摘要A series of Mn-Co-Ni-O spinel oxide films showing negative temperature coefficient were successfully deposited on alumina ceramic substrates by RF sputtering procedure. All films showed a poly-crystalline spinel structure. For an Ar:O-2 ratio of 10:0, the deposited film showed the highest grow rate and a two-layer-structured Mn-Co-Ni-O spinel film was formed. The high performance of the MCN thin film is testified by a room temperature resistance of 4.16 M Omega, a B value of 5999 K and activation energy of 0.52 eV. These improvements are meaningful, especially concerning industrial applications.
收录类别SCI
WOS记录号WOS:000402566900088
源URL[http://ir.xjipc.cas.cn/handle/365002/4871]  
专题新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
新疆理化技术研究所_材料物理与化学研究室
作者单位1.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environments, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
2.Shihezi Univ, Dept Phys, Shihezi 832003, Peoples R China
3.Chendu Technol Univ, Coll Elect Engn, Chengdu 611730, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Shi, Q ,Ren, W ,Kong, WW ,et al. High B value Mn-Co-Ni spinel films on alumina substrate by RF sputtering[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(13):9876-9881.
APA Shi, Q .,Ren, W .,Kong, WW .,Gao, B .,Wang, L .,...&Bian, L .(2017).High B value Mn-Co-Ni spinel films on alumina substrate by RF sputtering.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28(13),9876-9881.
MLA Shi, Q ,et al."High B value Mn-Co-Ni spinel films on alumina substrate by RF sputtering".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28.13(2017):9876-9881.

入库方式: OAI收割

来源:新疆理化技术研究所

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