Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells
文献类型：期刊论文
| 作者 | Wang, HJ (Wang Hai-Jiao)1; Li, YD (Li Yu-Dong)1 ; Guo, Q (Guo Qi)1; Ma, LY (Ma Li-Ya)1; Wen, L (Wen Lin)1; Wang, B (Wang Bo)1
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| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2015 |
| 卷号 | 32期号:5 |
| 通讯作者 | Li, YD |
| 英文摘要 | Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells (namely triple wells and five wells embedded) and bulk InGaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence (PL) intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In0.53Ga0.47As wells and InP barrier layers. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000354093300025 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4891]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 固体辐射物理研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, HJ ,Li, YD ,Guo, Q ,et al. Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells[J]. CHINESE PHYSICS LETTERS,2015,32(5). |
| APA | Wang, HJ ,Li, YD ,Guo, Q ,Ma, LY ,Wen, L ,&Wang, B .(2015).Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells.CHINESE PHYSICS LETTERS,32(5). |
| MLA | Wang, HJ ,et al."Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells".CHINESE PHYSICS LETTERS 32.5(2015). |
入库方式： OAI收割
来源：新疆理化技术研究所
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