Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices
文献类型：期刊论文
| 作者 | Wang LJ ; Liu GJ ; Wang HB ; Song D ; Yu B ; Yan DH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 91期号:15页码:文献编号：153508 |
| 关键词 | THIN-FILM TRANSISTORS FIELD-EFFECT TRANSISTORS AMORPHOUS-SILICON CAPACITANCE DIODES PERFORMANCE DIELECTRICS DEPENDENCE |
| ISSN号 | 0003-6951 |
| 通讯作者 | yan dh |
| 中文摘要 | we investigated electrical properties of vanadyl phthalocyanine (vopc) metal-insulator-semiconductor (mis) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6p) layer by weak epitaxy growth method. the vopc/p-6p mis diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 v and small hysteresis effect at a gate voltage of +/- 40 v due to the low interface trap state density of about 1x10(10) ev(-1) cm(-2). furthermore, a high transition frequency of about 10 khz was also observed under their accumulation mode. the results indicated that vopc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000250140700070 |
| 公开日期 | 2010-07-13 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/13827]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang LJ,Liu GJ,Wang HB,et al. Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices[J]. applied physics letters,2007,91(15):文献编号：153508. |
| APA | Wang LJ,Liu GJ,Wang HB,Song D,Yu B,&Yan DH.(2007).Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices.applied physics letters,91(15),文献编号：153508. |
| MLA | Wang LJ,et al."Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices".applied physics letters 91.15(2007):文献编号：153508. |
入库方式： OAI收割
来源：长春应用化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。