Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer
文献类型：期刊论文
| 作者 | Xuan Y ; Zhao NN ; Pan DC ; Ji XL ; Wang ZY ; Ma DG |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2007 |
| 卷号 | 22期号:9页码:1021-1024 |
| 关键词 | SEMICONDUCTING POLYMER IONIC DYE ELECTROLUMINESCENCE NANOCRYSTALS PHOTOLUMINESCENCE PHOTOCONDUCTIVITY DEVICES COMMUNICATION ENHANCEMENT |
| ISSN号 | 0268-1242 |
| 通讯作者 | xuan y |
| 中文摘要 | near infrared (nir) light emitting diodes employing composites of an ir fluorescent dye, cdse/cdscore/shell semiconductor quantum dots and poly( n-vinylcarbazole) (pvk) have been demonstrated. the device, with a configuration of indium-tin-oxide (ito)//pedot:pss//pvk:nir dye:cdse/cds//al, had a turn-on voltage of 7 v, emitted the nir light with a maximum at 890 nm and the irradiance intensity of 96 mu w. the electroluminescence efficiency of 0.02% was achieved at a current density of 13 ma cm(-2). |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000249755900009 |
| 公开日期 | 2010-07-13 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/13939]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xuan Y,Zhao NN,Pan DC,et al. Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer[J]. semiconductor science and technology,2007,22(9):1021-1024. |
| APA | Xuan Y,Zhao NN,Pan DC,Ji XL,Wang ZY,&Ma DG.(2007).Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer.semiconductor science and technology,22(9),1021-1024. |
| MLA | Xuan Y,et al."Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer".semiconductor science and technology 22.9(2007):1021-1024. |
入库方式： OAI收割
来源：长春应用化学研究所
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