High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter
文献类型：期刊论文
| 作者 | Yi MD ; Yu SY ; Feng CG ; Zhang T ; Ma DG ; Meruvia MS ; Huemmelgen IA |
| 刊名 | organic electronics
 |
| 出版日期 | 2007 |
| 卷号 | 8期号:4页码:311-316 |
| 关键词 | ART. NO. 193508 DIODES LAYER BASE |
| ISSN号 | 1566-1199 |
| 通讯作者 | ma dg |
| 中文摘要 | we report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. these transistors were constructed presenting an al/n-si/au/alq(3)/v2o5/al structure. we investigate the influence of the v2o5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 v, in both, common-base and common-emitter modes. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000247402800004 |
| 公开日期 | 2010-07-13 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/13947]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yi MD,Yu SY,Feng CG,et al. High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter[J]. organic electronics,2007,8(4):311-316. |
| APA | Yi MD.,Yu SY.,Feng CG.,Zhang T.,Ma DG.,...&Huemmelgen IA.(2007).High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter.organic electronics,8(4),311-316. |
| MLA | Yi MD,et al."High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter".organic electronics 8.4(2007):311-316. |
入库方式： OAI收割
来源：长春应用化学研究所
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