High-mobility pentacene thin-film transistors with copolymer-gate dielectric
文献类型：期刊论文
| 作者 | Wang W ; Shi JW ; Jiang WH ; Guo SX ; Zhang HM ; Quan BF ; Ma DG |
| 刊名 | microelectronics journal
 |
| 出版日期 | 2007 |
| 卷号 | 38期号:1页码:27-30 |
| 关键词 | POLYMER INTEGRATED-CIRCUITS ORGANIC TRANSISTORS DRIVEN |
| ISSN号 | 0026-2692 |
| 通讯作者 | wang w |
| 中文摘要 | pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (pnima-gma) as the gate dielectric. the optimum active layer thickness in thin-film transistors (otfts) was investigated. the present devices show a wide operation voltage range. the on/off current ratio is as high as 10(5). in linear region (v-ds = -2v), the field-effect mobility of device increases with the increase in gate field at low-voltage region (v-g < - 20 v), and a mobility of 0.33 cm(2)/vs can be obtained when v-g > 20 v. in saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm(2)/vs can be obtained at v-g = -95v. the influence of voltage on mobility of device was investigated. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000243832300006 |
| 公开日期 | 2010-07-13 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/13965]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang W,Shi JW,Jiang WH,et al. High-mobility pentacene thin-film transistors with copolymer-gate dielectric[J]. microelectronics journal,2007,38(1):27-30. |
| APA | Wang W.,Shi JW.,Jiang WH.,Guo SX.,Zhang HM.,...&Ma DG.(2007).High-mobility pentacene thin-film transistors with copolymer-gate dielectric.microelectronics journal,38(1),27-30. |
| MLA | Wang W,et al."High-mobility pentacene thin-film transistors with copolymer-gate dielectric".microelectronics journal 38.1(2007):27-30. |
入库方式： OAI收割
来源：长春应用化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。