Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material
文献类型：期刊论文
| 作者 | Lin J ; Zheng M ; Chen JS ; Gao XA ; Ma DG |
| 刊名 | inorganic chemistry
 |
| 出版日期 | 2007 |
| 卷号 | 46期号:1页码:341-344 |
| 关键词 | THIN-FILM LOGIC DEVICE |
| ISSN号 | 0020-1669 |
| 通讯作者 | gao x |
| 中文摘要 | negative differential resistance (ndr) and memory effect were observed in diodes based on 1,4-dibenzyl c60 (dbc) and zinc phthalocyanine doped polystyrene hybrid material. certain negative starting sweeping voltages led to a reproducible ndr, making the hybrid material a promising candidate in memory devices. it was found that the introduction of dbc enhanced the on/off current ratio and significantly improved the memory stability. the on/off current ratio was up to 2 orders of magnitude. the write-read-erase-reread cycles were more than 10(6), and the retention time reached 10 000 s without current degradation. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000243157100041 |
| 公开日期 | 2010-07-13 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/14637]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lin J,Zheng M,Chen JS,et al. Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material[J]. inorganic chemistry,2007,46(1):341-344. |
| APA | Lin J,Zheng M,Chen JS,Gao XA,&Ma DG.(2007).Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material.inorganic chemistry,46(1),341-344. |
| MLA | Lin J,et al."Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material".inorganic chemistry 46.1(2007):341-344. |
入库方式： OAI收割
来源：长春应用化学研究所
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