中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Sol-ogel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0 <= x <= 1) phosphor films

文献类型:期刊论文

作者Han XM ; Lin J ; Pang ML ; Yu M ; Wang SB
刊名applied physics a-materials science & processing
出版日期2005
卷号80期号:7页码:1547-1552
关键词GEL DEPOSITION RARE-EARTH THIN-FILMS EMISSION CRYSTALS FLUORESCENCE TRANSITIONS SPECTRA CAWO4
ISSN号0947-8396
通讯作者lin j
中文摘要y2(1-x) gd2xsiwo8 : a ( 0 <= x <= 1; a= eu3+, dy3+, sm3+, er3+) phosphor films have been prepared on silica glass substrates through the sol - gel dip-coating process. x-ray diffraction (xrd), fourier transform infrared spectroscopy (ft-ir), thermogravimetric and differential thermal analysis (tg-dta), atomic force microscope (afm), scanning electron microscopy (sem) and photoluminescence spectra as well as lifetimes were used to characterize the resulting films. the results of the xrd indicated that the films began to crystallize at 800 degrees c and crystallized completely at 1000 degrees c. the afm and sem study revealed that the phosphor films, which mainly consisted of closely packed grains with an average size of 90 - 120 nm with a thickness of 660 nm, were uniform and crack free. owing to an efficient energy transfer from the wo42- groups to the activators, the doped lanthanide ion ( a) showed its characteristic f - f transition emissions in crystalline y2(1-x) gd2xsiwo8 (0 <= x <= 1) films. the optimum concentrations for eu3+, dy3+, sm3+, er3+ were determined to be 21, 5, 3 and 7 mol% of y3+ in y2siwo8 films, respectively.
收录类别SCI
语种英语
WOS记录号WOS:000227908400029
公开日期2010-08-17
源URL[http://ir.ciac.jl.cn/handle/322003/15245]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Han XM,Lin J,Pang ML,et al. Sol-ogel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0 <= x <= 1) phosphor films[J]. applied physics a-materials science & processing,2005,80(7):1547-1552.
APA Han XM,Lin J,Pang ML,Yu M,&Wang SB.(2005).Sol-ogel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0 <= x <= 1) phosphor films.applied physics a-materials science & processing,80(7),1547-1552.
MLA Han XM,et al."Sol-ogel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0 <= x <= 1) phosphor films".applied physics a-materials science & processing 80.7(2005):1547-1552.

入库方式: OAI收割

来源:长春应用化学研究所

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