Fabrication, patterning and luminescence properties of X-2-Y2SiO5 : A (A = Eu3+, Tb3+, Ce3+) phosphor films via sol-gel soft lithography
文献类型：期刊论文
| 作者 | Han XM ; Lin J ; Fu J ; Xing RB ; Yu M ; Zhou YH ; Pang ML |
| 刊名 | solid state sciences
 |
| 出版日期 | 2004 |
| 卷号 | 6期号:4页码:349-355 |
| 关键词 | EMISSION DISPLAY APPLICATIONS RARE-EARTH THIN-FILMS METALLORGANIC DECOMPOSITION CRYSTAL-STRUCTURE DEPOSITION Y2SIO5 IONS |
| ISSN号 | 1293-2558 |
| 通讯作者 | lin j |
| 中文摘要 | x-2-y(2)sio(5):a (a = eu3+, tb3+, ce3+) phosphor films and their patterning were fabricated by a sol-gel process combined with a soft lithography. x-ray diffraction (xrd), fourier transform infrared spectroscopy (ft-ir), atomic force microscopy (afm), scanning electron microscopy (sem) optical microscopy and photoluminescence (pl) were used to characterize the resulting films. the results of xrd indicated that the films began to crystallize at 900 degreesc with x-1-y2sio5, which transformed completely to x-2-y2sio5 at 1250 degreesc. patterned thin films with different band widths (5 pin spaced by 5 pm and 16 pm spaced by 24 pm) were obtained by a soft lithography technique (micromoulding in capillaries, mimic). the sem and afm study revealed that the nonpattemed phosphor films were uniform and crack free, and the films mainly consisted of closely packed grains with an average size of 350 run. the doped rare earth ions (a) showed their characteristic emissions in x-2-y2sio5 phosphor films, i.e., d-5(0)-f-7(j) (j = 0, 1, 2,3,4) for eu3+, d-5(3), (4)-f-7(j) (j = 6, 5, 4, 3) for tb3+ and 5d (d-2)-4f (f-2(2/5),(2/7)) for ce3+, respectively. the optimum doping concentrations for eu3+, tb3+ were determined to be 13 and 8 mol% of y3+ in x-2-y2sio5 films, respectively. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000221199700006 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/15251]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han XM,Lin J,Fu J,et al. Fabrication, patterning and luminescence properties of X-2-Y2SiO5 : A (A = Eu3+, Tb3+, Ce3+) phosphor films via sol-gel soft lithography[J]. solid state sciences,2004,6(4):349-355. |
| APA | Han XM.,Lin J.,Fu J.,Xing RB.,Yu M.,...&Pang ML.(2004).Fabrication, patterning and luminescence properties of X-2-Y2SiO5 : A (A = Eu3+, Tb3+, Ce3+) phosphor films via sol-gel soft lithography.solid state sciences,6(4),349-355. |
| MLA | Han XM,et al."Fabrication, patterning and luminescence properties of X-2-Y2SiO5 : A (A = Eu3+, Tb3+, Ce3+) phosphor films via sol-gel soft lithography".solid state sciences 6.4(2004):349-355. |
入库方式： OAI收割
来源：长春应用化学研究所
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