Organic thin-film transistors having inorganic/organic double gate insulators
文献类型：期刊论文
| 作者 | Wang J ; Yan XJ ; Xu YX ; Zhang J ; Yan DH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2004 |
| 卷号 | 85期号:22页码:5424-5426 |
| 关键词 | FIELD-EFFECT TRANSISTORS LOW-VOLTAGE DIELECTRICS MORPHOLOGY CIRCUITS |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang j |
| 中文摘要 | bottom-contact organic thin-film transistors (bc otfts) based on inorganic/organic double gate insulators were demonstrated. the double gate insulators consisted of tantalum pentoxide (ta2o5) with high dielectric constant (kappa) as the first gate insulator and octadecyltrichlorosilane (ots) with low kappa as the second gate insulator. the devices have carrier mobilities larger than 10(-2) cm(2)/v s, on/off current ratio greater than 10(5), and the threshold voltage of -14 v, which is threefold larger field-effect mobility and an order of magnitude larger on/off current ratio than the otfts with a ta2o5 gate insulator. the leakage current was decreased from 2.4x10(-6) to 7.4x10(-8) a due to the introduction of the ots second dielectric layer. the results demonstrated that using inorganic/organic double insulator as the gate dielectric layer is an effective method to fabricate otfts with improved electric characteristics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000225483700099 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://202.98.16.49/handle/322003/15413]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang J,Yan XJ,Xu YX,et al. Organic thin-film transistors having inorganic/organic double gate insulators[J]. applied physics letters,2004,85(22):5424-5426. |
| APA | Wang J,Yan XJ,Xu YX,Zhang J,&Yan DH.(2004).Organic thin-film transistors having inorganic/organic double gate insulators.applied physics letters,85(22),5424-5426. |
| MLA | Wang J,et al."Organic thin-film transistors having inorganic/organic double gate insulators".applied physics letters 85.22(2004):5424-5426. |
入库方式： OAI收割
来源：长春应用化学研究所
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