Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine
文献类型：期刊论文
| 作者 | Yuan JF ; Zhang JD ; Wang J ; Yan DH ; Xu W |
| 刊名 | thin solid films
 |
| 出版日期 | 2004 |
| 卷号 | 450期号:2页码:316-319 |
| 关键词 | THIN-FILM TRANSISTORS CHARGE TRAPPING INSTABILITIES TRANSPORT |
| ISSN号 | 0040-6090 |
| 通讯作者 | yuan jf |
| 中文摘要 | the effects of positive and negative gate-bias stress on organic field-effect transistors (ofet) based on tantalum (ta)/tantalum pentoxide (ta2o5)/fluorinated copper phthalocyanine (f16cupc) structure are investigated as a function of stress time and stress temperature. it is shown that gate-bias stress induces a parallel threshold voltage shift (deltav(t)) of ofets without changes of field-effect mobility mu(ef) and sub-threshold slope (deltas). the deltav(t) is observed to be logarithmically dependent on time at high gate-bias appropriate to ofet operation. more importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. the threshold voltage shift is temperature dependent with activation energy of 0.51 ev we concluded that threshold voltage shift of the ofet with f16cupc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000220442100014 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/15437]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yuan JF,Zhang JD,Wang J,et al. Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine[J]. thin solid films,2004,450(2):316-319. |
| APA | Yuan JF,Zhang JD,Wang J,Yan DH,&Xu W.(2004).Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine.thin solid films,450(2),316-319. |
| MLA | Yuan JF,et al."Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine".thin solid films 450.2(2004):316-319. |
入库方式： OAI收割
来源：长春应用化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。