Heterojunction ambipolar organic transistors fabricated by a two-step vacuum-deposition process
文献类型：期刊论文
| 作者 | Wang J ; Wang HB ; Yan XJ ; Huang HC ; Jin D ; Shi JW ; Tang YH ; Yan DH |
| 刊名 | advanced functional materials
 |
| 出版日期 | 2006 |
| 卷号 | 16期号:6页码:824-830 |
| ISSN号 | 1616-301x |
| 关键词 | THIN-FILM TRANSISTORS FIELD-EFFECT TRANSISTORS COPPER PHTHALOCYANINE EFFECT MOBILITY HETEROSTRUCTURE PENTACENE SEMICONDUCTORS ELECTRONICS INTERFACE TRANSPORT |
| 通讯作者 | wang j |
| 中文摘要 | ambipolar organic field-effect transistors (ofets) are produced, based on organic heterojunctions fabricated by a two-step vacuum-deposition process. copper phthalocyanine (cupc) deposited at a high temperature (250 degrees c) acts as the first (p-type component) layer, and hexadecafluorophthalocyaninatocopper (f16cupc) deposited at room temperature (25 degrees c) acts as the second (n-type component) layer. a heterojunction with an interpenetrating network is obtained as the active layer for the ofets. these heterojunction devices display significant ambipolar charge transport with symmetric electron and hole mobilities of the order of 10(-4) cm(2) v-1 s(-1) in air. conductive channels are at the interface between the f16cupc and cupc domains in the interpenetrating networks. electrons are transported in the f16cupc regions, and holes in the cupc regions. the molecular arrangement in the heterojunction is well ordered, resulting in a balance of the two carrier densities responsible for the ambipolar electrical characteristics. the thin-film morphology of the organic heterojunction with its interpenetrating network structure can be controlled well by the vacuum-deposition process. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000236812400013 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/15859]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang J,Wang HB,Yan XJ,et al. Heterojunction ambipolar organic transistors fabricated by a two-step vacuum-deposition process[J]. advanced functional materials,2006,16(6):824-830. |
| APA | Wang J.,Wang HB.,Yan XJ.,Huang HC.,Jin D.,...&Yan DH.(2006).Heterojunction ambipolar organic transistors fabricated by a two-step vacuum-deposition process.advanced functional materials,16(6),824-830. |
| MLA | Wang J,et al."Heterojunction ambipolar organic transistors fabricated by a two-step vacuum-deposition process".advanced functional materials 16.6(2006):824-830. |
入库方式： OAI收割
来源：长春应用化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。