Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture
文献类型：期刊论文
| 作者 | Feng CG ; Yi MD ; Yu SY ; Ma DG ; Feng CG ; Zhang T ; Meruvia MS ; Hummelgen IA |
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:20页码:文献编号：203501 |
| 关键词 | HIGH-GAIN |
| ISSN号 | 0003-6951 |
| 通讯作者 | feng cg |
| 中文摘要 | we demonstrate the production of copper phthalocyanine (cupc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. these transistors are prepared by evaporating a thin metal layer (ag or al) that acts as base on top of a si substrate that acts as collector. in the sequence cupc and au are thermally sublimated to produce the emitter, constituting a quite simple device production procedure with the additional advantage of allowing higher integration due to its vertical architecture. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000237682100089 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/15927]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng CG,Yi MD,Yu SY,et al. Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture[J]. applied physics letters,2006,88(20):文献编号：203501. |
| APA | Feng CG.,Yi MD.,Yu SY.,Ma DG.,Feng CG.,...&Hummelgen IA.(2006).Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture.applied physics letters,88(20),文献编号：203501. |
| MLA | Feng CG,et al."Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture".applied physics letters 88.20(2006):文献编号：203501. |
入库方式： OAI收割
来源：长春应用化学研究所
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