Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes
文献类型：期刊论文
| 作者 | Fang JF ; You H ; Chen JS ; Lin J ; Ma DG |
| 刊名 | inorganic chemistry
 |
| 出版日期 | 2006 |
| 卷号 | 45期号:9页码:3701-3704 |
| 关键词 | DATA-STORAGE APPLICATIONS CONJUGATED-POLYMER ELECTRICAL BISTABILITY NONVOLATILE MEMORY EUROPIUM COMPLEX CHARGE-TRANSFER THIN-FILMS CELLS SYSTEM DIODES |
| ISSN号 | 0020-1669 |
| 通讯作者 | ma dg |
| 中文摘要 | memory effects in single-layer organic light-emitting devices based on sm3+, gd3+, and eu3+ rare earth complexes were realized. the device structure was indium-tin-oxide (ito)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (pedot)/poly(n-vinyl carbazole) (pvk): rare earth complex/lif/ca/ag. it was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000237165500033 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/16023]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fang JF,You H,Chen JS,et al. Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes[J]. inorganic chemistry,2006,45(9):3701-3704. |
| APA | Fang JF,You H,Chen JS,Lin J,&Ma DG.(2006).Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes.inorganic chemistry,45(9),3701-3704. |
| MLA | Fang JF,et al."Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes".inorganic chemistry 45.9(2006):3701-3704. |
入库方式： OAI收割
来源：长春应用化学研究所
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