High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture
文献类型:期刊论文
作者 | Yi MD ; Yu SY ; Ma DG ; Feng CG ; Zhang T ; Meruvia MS ; Hummelgen IA |
刊名 | journal of applied physics
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出版日期 | 2006 |
卷号 | 99期号:10页码:文献编号:106102 |
关键词 | STATIC INDUCTION TRANSISTOR HIGH-GAIN |
ISSN号 | 0021-8979 |
通讯作者 | ma dg |
中文摘要 | we report the construction of hybrid permeable-base transistors, in vertical architecture, using tris(8-hydroxyquinoline) aluminum as emitter, a thin gold layer as base, and n-type silicon as collector. these transistors present high common-base current gain, can be operated at low driving voltages, and allow high current density. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000237943800068 |
公开日期 | 2010-08-17 |
源URL | [http://ir.ciac.jl.cn/handle/322003/16287] ![]() |
专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
推荐引用方式 GB/T 7714 | Yi MD,Yu SY,Ma DG,et al. High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture[J]. journal of applied physics,2006,99(10):文献编号:106102. |
APA | Yi MD.,Yu SY.,Ma DG.,Feng CG.,Zhang T.,...&Hummelgen IA.(2006).High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture.journal of applied physics,99(10),文献编号:106102. |
MLA | Yi MD,et al."High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture".journal of applied physics 99.10(2006):文献编号:106102. |
入库方式: OAI收割
来源:长春应用化学研究所
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