中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture

文献类型:期刊论文

作者Yi MD ; Yu SY ; Ma DG ; Feng CG ; Zhang T ; Meruvia MS ; Hummelgen IA
刊名journal of applied physics
出版日期2006
卷号99期号:10页码:文献编号:106102
关键词STATIC INDUCTION TRANSISTOR HIGH-GAIN
ISSN号0021-8979
通讯作者ma dg
中文摘要we report the construction of hybrid permeable-base transistors, in vertical architecture, using tris(8-hydroxyquinoline) aluminum as emitter, a thin gold layer as base, and n-type silicon as collector. these transistors present high common-base current gain, can be operated at low driving voltages, and allow high current density.
收录类别SCI
语种英语
WOS记录号WOS:000237943800068
公开日期2010-08-17
源URL[http://ir.ciac.jl.cn/handle/322003/16287]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Yi MD,Yu SY,Ma DG,et al. High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture[J]. journal of applied physics,2006,99(10):文献编号:106102.
APA Yi MD.,Yu SY.,Ma DG.,Feng CG.,Zhang T.,...&Hummelgen IA.(2006).High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture.journal of applied physics,99(10),文献编号:106102.
MLA Yi MD,et al."High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture".journal of applied physics 99.10(2006):文献编号:106102.

入库方式: OAI收割

来源:长春应用化学研究所

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