Negative differential resistance and multilevel memory effects in organic devices
文献类型：期刊论文
| 作者 | Chen JS ; Xu LL ; Lin J ; Geng YH ; Wang LX ; Ma DG |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2006 |
| 卷号 | 21期号:8页码:1121-1124 |
| ISSN号 | 0268-1242 |
| 关键词 | NONVOLATILE MEMORY THIN-FILMS |
| 通讯作者 | chen js |
| 中文摘要 | negative differential resistance ( ndr) and multilevel memory effects were obtained in organic devices consisting of an anthracene derivative, 9,10-bis-{ 9,9-di-[ 4-(phenyl-p-tolyl-amino)-phenyl]-9h-fluoren-2-yl}-anthracene ( dafa), sandwiched between ag and ito electrodes. the application of a negative bias voltage leads to negative differential resistance in current-voltage characteristics and different negative voltages produce different conductance currents, resulting in the multilevel memory capability of the devices. the ndr property has been attributed to charge trapping at the dafa/ag interface. this opens up a wide range of application possibilities of such organic-based ndr devices in memory and logic circuits. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000240123100025 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/16647]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen JS,Xu LL,Lin J,et al. Negative differential resistance and multilevel memory effects in organic devices[J]. semiconductor science and technology,2006,21(8):1121-1124. |
| APA | Chen JS,Xu LL,Lin J,Geng YH,Wang LX,&Ma DG.(2006).Negative differential resistance and multilevel memory effects in organic devices.semiconductor science and technology,21(8),1121-1124. |
| MLA | Chen JS,et al."Negative differential resistance and multilevel memory effects in organic devices".semiconductor science and technology 21.8(2006):1121-1124. |
入库方式： OAI收割
来源：长春应用化学研究所
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