中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Organic integrated pixels fabricated by a full evaporation method

文献类型:期刊论文

作者Wang W ; Shi JW ; Guo SX ; Zhang HM ; Liu MD ; Quan BF ; Ma DG
刊名semiconductor science and technology
出版日期2006
卷号21期号:3页码:295-297
关键词EMITTING-DIODES DRIVEN THIN-FILM TRANSISTORS
ISSN号0268-1242
通讯作者wang w
中文摘要an organic integrated pixel consisting of an organic light-emitting diode driven by an organic thin-film field-effect transistor (otft) was fabricated by a full evaporation method oil a transparent glass substrate. the otft was designed as a top-gate structure, and the insulator is composed of a double-layer polymer of nylon 6 and teflon to lower the operation voltage and the gate-leakage current, and improve the device stability. the field-effect mobility of the otft is more than 0.5 cm(2) v-1 s(-1), and the on/off ratio is larger than 10(3). the brightness of the pixel reached as large as 300 cd m(-2) at a driving current of 50 mu a.
收录类别SCI
语种英语
WOS记录号WOS:000236590100017
公开日期2010-08-17
源URL[http://ir.ciac.jl.cn/handle/322003/16653]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Wang W,Shi JW,Guo SX,et al. Organic integrated pixels fabricated by a full evaporation method[J]. semiconductor science and technology,2006,21(3):295-297.
APA Wang W.,Shi JW.,Guo SX.,Zhang HM.,Liu MD.,...&Ma DG.(2006).Organic integrated pixels fabricated by a full evaporation method.semiconductor science and technology,21(3),295-297.
MLA Wang W,et al."Organic integrated pixels fabricated by a full evaporation method".semiconductor science and technology 21.3(2006):295-297.

入库方式: OAI收割

来源:长春应用化学研究所

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