Improved performance by a double-insulator layer in organic thin-flim transistors
文献类型：期刊论文
| 作者 | Wang W ; Shi JW ; Guo SX ; Zhang HM ; Quan BF ; Ma DG |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:11页码:3108-3110 |
| 关键词 | FIELD-EFFECT TRANSISTORS DRIVEN |
| ISSN号 | 0256-307x |
| 通讯作者 | wang w |
| 中文摘要 | organic thin film transistors based on pentacene are fabricated by the method of full evaporation. the thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. it is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. the devices with double-insulator layer exhibit field-effect mobility as large as 0.14 cm(2)/vs and near the zero threshold voltage. the results demonstrate that using proper double insulator as the gate dielectrics is an effective method to fabricate otfts with high electrical performance. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000241992400062 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/16981]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang W,Shi JW,Guo SX,et al. Improved performance by a double-insulator layer in organic thin-flim transistors[J]. chinese physics letters,2006,23(11):3108-3110. |
| APA | Wang W,Shi JW,Guo SX,Zhang HM,Quan BF,&Ma DG.(2006).Improved performance by a double-insulator layer in organic thin-flim transistors.chinese physics letters,23(11),3108-3110. |
| MLA | Wang W,et al."Improved performance by a double-insulator layer in organic thin-flim transistors".chinese physics letters 23.11(2006):3108-3110. |
入库方式： OAI收割
来源：长春应用化学研究所
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