Boundary effect of relief structure on crystallization of diblock copolymer in thin films
文献类型:期刊论文
作者 | Zhang FJ ; Chen YZ ; Huang HY ; Hu ZJ ; He TB |
刊名 | langmuir
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出版日期 | 2003 |
卷号 | 19期号:14页码:5563-5566 |
关键词 | ATOMIC-FORCE MICROSCOPY BLOCK-COPOLYMERS FREE-SURFACE CONFINED CRYSTALLIZATION POLYMER CRYSTALLIZATION POLY(ETHYLENE OXIDES) CRYSTAL ORIENTATIONS OXIDIZED SILICON ULTRATHIN FILMS IN-SITU |
ISSN号 | 0743-7463 |
通讯作者 | zhang fj |
中文摘要 | in this letter, crystal growth of a symmetric crystalline-amorphous diblock copolymer, poly(styrene-b-epsilon-caprolactone) (ps-b-pcl), in thin films was investigated by atomic force microscopy (afm), relief structures of holes and islands were formed during annealing the film at the molten state, and the in situ observation of subsequent crystal growth at room temperature indicated that the crystals were preferred to occur at the edge of holes or islands and grew into the interior area. it was concluded that the stretched pcl blocks at the edge of relief structures, caused by material transportation or deformation of the interface, could act as nucleation agents during polymer crystallization. the crystal growth rate of individual lamellae varied both from lamellae to lamellae and in time, but the area occupied by crystals increased constantly with time. at 22 degreesc, the growth rate was 1.2 x 10(-2) mum(2)/min with the scan size 2 x 2 mum(2). |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000183994400003 |
公开日期 | 2010-09-13 |
源URL | [http://202.98.16.49/handle/322003/17191] ![]() |
专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang FJ,Chen YZ,Huang HY,et al. Boundary effect of relief structure on crystallization of diblock copolymer in thin films[J]. langmuir,2003,19(14):5563-5566. |
APA | Zhang FJ,Chen YZ,Huang HY,Hu ZJ,&He TB.(2003).Boundary effect of relief structure on crystallization of diblock copolymer in thin films.langmuir,19(14),5563-5566. |
MLA | Zhang FJ,et al."Boundary effect of relief structure on crystallization of diblock copolymer in thin films".langmuir 19.14(2003):5563-5566. |
入库方式: OAI收割
来源:长春应用化学研究所
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