Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes
文献类型：期刊论文
| 作者 | Yuan JF ; Zhang J ; Wang J ; Yan XJ ; Yan DH ; Xu W |
| 刊名 | applied physics letters
 |
| 出版日期 | 2003 |
| 卷号 | 82期号:22页码:3967-3969 |
| 关键词 | THIN-FILM TRANSISTORS POLYMER INTEGRATED-CIRCUITS MOBILITY |
| ISSN号 | 0003-6951 |
| 通讯作者 | yuan jf |
| 中文摘要 | an organic thin-film transistor (otft) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. copper phthalocyanine (cupc), a well-known organic semiconductor, is used as an active layer to test performance of the device. compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. the performance of the device is almost the same as that of a top-contact device. the low-dielectric polymer may play two roles to improve otft performance. one is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. the other is that the polymer influences growth behavior of cupc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. advantages of the otft having bottom-contact structure make it useful for integrated plastic electronic devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000183124200053 |
| 公开日期 | 2010-09-13 |
| 源URL | [http://202.98.16.49/handle/322003/17649]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yuan JF,Zhang J,Wang J,et al. Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes[J]. applied physics letters,2003,82(22):3967-3969. |
| APA | Yuan JF,Zhang J,Wang J,Yan XJ,Yan DH,&Xu W.(2003).Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes.applied physics letters,82(22),3967-3969. |
| MLA | Yuan JF,et al."Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes".applied physics letters 82.22(2003):3967-3969. |
入库方式： OAI收割
来源：长春应用化学研究所
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