中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation of conducting layers on excimer-laser-irradiated polyimide film surfaces

文献类型:期刊论文

作者Qin ZY ; Huang XY ; Wang DK ; He TB ; Wang QY ; Zhang YS
刊名surface and interface analysis
出版日期2000
卷号29期号:8页码:514-518
关键词ABLATION POLYMERS TEMPERATURE RADIATION
ISSN号0142-2421
通讯作者he tb
中文摘要conducting layers on krf excimer-laser-irradiated polyimide film surfaces were investigated by xps, sem and fourier transform infrared (ftir)-raman spectroscopy, analysis of polyimide residue after laser irradiation provided valuable insight into the nature of the formation of conducting layers. the subtle different between krf laser irradiation and the pyrolysis of polyimide was found by comparison of the formation process of conducting layers. a physical picture was presented to describe better the formation of conducting layers. under krf laser irradiation, polyimide films underwent thermal decomposition assisted by photoinduced direct bond breaking. polycrystalline graphite was subsequently formed as the product of the secondary addition reaction of carbon-enriched clusters, such reaction was supported by the remaining energy on the irradiated polyimide film surface. this result shows that the thermal process played an important role that was not just restricted to the formation of conducting layers, copyright (c) 2000 john wiley & sons, ltd.
收录类别SCI收录期刊论文
语种英语
WOS记录号WOS:000088932400005
公开日期2010-11-04
源URL[http://202.98.16.49/handle/322003/19599]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Qin ZY,Huang XY,Wang DK,et al. Formation of conducting layers on excimer-laser-irradiated polyimide film surfaces[J]. surface and interface analysis,2000,29(8):514-518.
APA Qin ZY,Huang XY,Wang DK,He TB,Wang QY,&Zhang YS.(2000).Formation of conducting layers on excimer-laser-irradiated polyimide film surfaces.surface and interface analysis,29(8),514-518.
MLA Qin ZY,et al."Formation of conducting layers on excimer-laser-irradiated polyimide film surfaces".surface and interface analysis 29.8(2000):514-518.

入库方式: OAI收割

来源:长春应用化学研究所

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