Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate
文献类型：期刊论文
| 作者 | Meng QB ; Fei YJ ; Kang J ; Xiong YY ; Lin ZD ; Feng KA |
| 刊名 | modern physics letters b
 |
| 出版日期 | 1999 |
| 卷号 | 13期号:3-4页码:125-129 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION ORIENTED DIAMOND GROWTH NUCLEATION LAYERS BIAS |
| ISSN号 | 0217-9849 |
| 通讯作者 | meng qb |
| 中文摘要 | an interesting interface structure between diamond film and silicon substrate has been observed. that is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. this result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000080435500006 |
| 公开日期 | 2010-11-04 |
| 源URL | [http://202.98.16.49/handle/322003/21851]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Meng QB,Fei YJ,Kang J,et al. Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate[J]. modern physics letters b,1999,13(3-4):125-129. |
| APA | Meng QB,Fei YJ,Kang J,Xiong YY,Lin ZD,&Feng KA.(1999).Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate.modern physics letters b,13(3-4),125-129. |
| MLA | Meng QB,et al."Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate".modern physics letters b 13.3-4(1999):125-129. |
入库方式： OAI收割
来源：长春应用化学研究所
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