N-type GaSb single crystals with high below-band gap transmission
文献类型：期刊论文
| 作者 | Yong-Biao Bai; You-Wen Zhao; Gui-Ying Shen; Xiao-Yu Chen; Jing-Ming Liu; Hui Xie; Zhi-Yuan Dong; Jun Yang; Feng-Yun Yang and Feng-Hua Wang |
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2017 |
| 卷号 | 26期号:10页码:107801 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-05-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28307]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yong-Biao Bai,You-Wen Zhao,Gui-Ying Shen,et al. N-type GaSb single crystals with high below-band gap transmission[J]. Chinese Physics B,2017,26(10):107801. |
| APA | Yong-Biao Bai.,You-Wen Zhao.,Gui-Ying Shen.,Xiao-Yu Chen.,Jing-Ming Liu.,...&Feng-Yun Yang and Feng-Hua Wang.(2017).N-type GaSb single crystals with high below-band gap transmission.Chinese Physics B,26(10),107801. |
| MLA | Yong-Biao Bai,et al."N-type GaSb single crystals with high below-band gap transmission".Chinese Physics B 26.10(2017):107801. |
入库方式： OAI收割
来源：半导体研究所
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