Enhancement of below gap transmission of InAs single crystal via suppression of native defects
文献类型：期刊论文
| 作者 | Guiying Shen; Youwen Zhao; Zhiyuan Dong; Jingming Liu; Hui Xie; Yongbiao Bai; Xiaoyu Chen |
| 刊名 | Materials Research Express
 |
| 出版日期 | 2017 |
| 卷号 | 4期号:3页码:036203 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-05-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28308]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Guiying Shen,Youwen Zhao,Zhiyuan Dong,et al. Enhancement of below gap transmission of InAs single crystal via suppression of native defects[J]. Materials Research Express,2017,4(3):036203. |
| APA | Guiying Shen.,Youwen Zhao.,Zhiyuan Dong.,Jingming Liu.,Hui Xie.,...&Xiaoyu Chen.(2017).Enhancement of below gap transmission of InAs single crystal via suppression of native defects.Materials Research Express,4(3),036203. |
| MLA | Guiying Shen,et al."Enhancement of below gap transmission of InAs single crystal via suppression of native defects".Materials Research Express 4.3(2017):036203. |
入库方式： OAI收割
来源：半导体研究所
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