Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition
文献类型:期刊论文
作者 | Zesheng Ji; Lianshan Wang; Guijuan Zhao; Yulin Meng; Fangzheng Li; Huijie Li; Shaoyan Yang; Zhanguo Wang |
刊名 | Chinese Physics B |
出版日期 | 2017 |
卷号 | 26期号:7页码:078102 |
学科主题 | 半导体材料 |
公开日期 | 2018-05-23 |
源URL | [http://ir.semi.ac.cn/handle/172111/28309] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Zesheng Ji,Lianshan Wang,Guijuan Zhao,et al. Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition[J]. Chinese Physics B,2017,26(7):078102. |
APA | Zesheng Ji.,Lianshan Wang.,Guijuan Zhao.,Yulin Meng.,Fangzheng Li.,...&Zhanguo Wang.(2017).Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition.Chinese Physics B,26(7),078102. |
MLA | Zesheng Ji,et al."Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition".Chinese Physics B 26.7(2017):078102. |
入库方式: OAI收割
来源:半导体研究所
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