中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

文献类型:期刊论文

作者Zesheng Ji; Lianshan Wang; Guijuan Zhao; Yulin Meng; Fangzheng Li; Huijie Li; Shaoyan Yang; Zhanguo Wang
刊名Chinese Physics B
出版日期2017
卷号26期号:7页码:078102
学科主题半导体材料
公开日期2018-05-23
源URL[http://ir.semi.ac.cn/handle/172111/28309]  
专题半导体研究所_中科院半导体材料科学重点实验室
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GB/T 7714
Zesheng Ji,Lianshan Wang,Guijuan Zhao,et al. Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition[J]. Chinese Physics B,2017,26(7):078102.
APA Zesheng Ji.,Lianshan Wang.,Guijuan Zhao.,Yulin Meng.,Fangzheng Li.,...&Zhanguo Wang.(2017).Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition.Chinese Physics B,26(7),078102.
MLA Zesheng Ji,et al."Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition".Chinese Physics B 26.7(2017):078102.

入库方式: OAI收割

来源:半导体研究所

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