Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping
文献类型：期刊论文
| 作者 | Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Zesheng Ji; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2017 |
| 卷号 | 7页码:4497 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-05-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28311]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Guijuan Zhao,Huijie Li,Lianshan Wang,et al. Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping[J]. SCIENTIFIC REPORTS,2017,7:4497. |
| APA | Guijuan Zhao.,Huijie Li.,Lianshan Wang.,Yulin Meng.,Zesheng Ji.,...&Zhanguo Wang.(2017).Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping.SCIENTIFIC REPORTS,7,4497. |
| MLA | Guijuan Zhao,et al."Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping".SCIENTIFIC REPORTS 7(2017):4497. |
入库方式： OAI收割
来源：半导体研究所
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