Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer
文献类型：期刊论文
| 作者 | Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li; Shaoyan Yang; Zhanguo Wang |
| 刊名 | Superlattices and Microstructures
 |
| 出版日期 | 2017 |
| 卷号 | 110页码:324-329 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-05-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28301]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Fangzheng Li,Lianshan Wang,Guijuan Zhao,et al. Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer[J]. Superlattices and Microstructures,2017,110:324-329. |
| APA | Fangzheng Li.,Lianshan Wang.,Guijuan Zhao.,Yulin Meng.,Huijie Li.,...&Zhanguo Wang.(2017).Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer.Superlattices and Microstructures,110,324-329. |
| MLA | Fangzheng Li,et al."Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer".Superlattices and Microstructures 110(2017):324-329. |
入库方式： OAI收割
来源：半导体研究所
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