Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation
文献类型：期刊论文
| 作者 | X. L. Zeng; J. L. Yu; S. Y. Cheng; Y. F. Lai, Y. H. Chen; W. Huang |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2017 |
| 卷号 | 121页码:193901 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-05-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28299]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | X. L. Zeng,J. L. Yu,S. Y. Cheng,et al. Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation[J]. Journal of Applied Physics,2017,121:193901. |
| APA | X. L. Zeng,J. L. Yu,S. Y. Cheng,Y. F. Lai, Y. H. Chen,&W. Huang.(2017).Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation.Journal of Applied Physics,121,193901. |
| MLA | X. L. Zeng,et al."Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation".Journal of Applied Physics 121(2017):193901. |
入库方式： OAI收割
来源：半导体研究所
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