Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector
文献类型：期刊论文
| 作者 | B. S. Tao; P. Barate; J. Frougier; P. Renucci; B. Xu; A. Djeffal; H. Jaffrès; J.-M. George; X. Marie; S. Petit-Watelot |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2017 |
| 卷号 | 108页码:152404 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-05-30 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28418]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | B. S. Tao,P. Barate,J. Frougier,et al. Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector[J]. APPLIED PHYSICS LETTERS,2017,108:152404. |
| APA | B. S. Tao.,P. Barate.,J. Frougier.,P. Renucci.,B. Xu.,...&Y. Lu.(2017).Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector.APPLIED PHYSICS LETTERS,108,152404. |
| MLA | B. S. Tao,et al."Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector".APPLIED PHYSICS LETTERS 108(2017):152404. |
入库方式： OAI收割
来源：半导体研究所
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